MASK BLANK AND METHOD OF MANUFACTURING PHOTOMASK

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United States of America Patent

APP PUB NO 20230069092A1
SERIAL NO

17799573

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A mask blank has a structure where a thin film for pattern formation and a hard mask film are stacked in this order on a transparent substrate, featured in that the thin film is formed of a material containing chromium, the hard mask film includes a stacked structure of a lower layer and an upper layer, the lower layer is formed of a material containing silicon and oxygen, the upper layer is formed of a material containing tantalum and oxygen with an oxygen content of 30 atom % or more, and the ratio of a thickness of the upper layer relative to a total thickness of the hard mask film is 0.7 or less.

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Patent Owner(s)

Patent OwnerAddress
TEKSCEND PHOTOMASK CORP1-5-2 HIGASHI-SHIMBASHI MINATO-KU TOKYO 105-7133

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MAEDA, Hitoshi Tokyo, JP 64 364
MATSUI, Kazuaki Tokyo, JP 29 372
TANIGUCHI, Kazutake Tokyo, JP 9 10
YONEMARU, Naoto Tokyo, JP 2 0

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