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Abstract

A method for producing a first and second micromirror device. A silicon oxide layer is applied to at least the front side of a silicon wafer. The silicon oxide layer is removed so that a first and second separation region of the silicon oxide layer are generated, which are arranged spatially separated from each other along a separation plane. A silicon layer is applied to the front side of the silicon wafer and to the silicon oxide layer. An etching mask is applied to the rear side of the silicon wafer, the etching mask having a first opening along the separation plane of the first and second separation region. The silicon layer and the silicon wafer are removed, according to the etching mask on the rear side of the silicon wafer and according to the silicon oxide layer of the first and second separation region.

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