POWER DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Feb 16, 2023
app pub date -
May 19, 2022
filing date -
May 19, 2022
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Abstract
A power device includes: a semiconductor layer, a well region, a body region, a gate, a source, a drain, a field oxide region, and a self-aligned drift region. The field oxide region is formed on an upper surface of the semiconductor layer, wherein the field oxide region is located between the gate and the drain. The field oxide region is formed by steps including a chemical mechanical polish (CMP) process step. The self-aligned drift region is formed in the semiconductor layer, wherein the self-aligned drift region is entirely located vertically below and in contact with the field oxide region.
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