SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

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United States of America Patent

APP PUB NO 20230035562A1
SERIAL NO

17876547

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Abstract

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The substrate treatment method includes a first decompressing step, a first pressurizing step, and a first atmospheric pressure step. In the first decompressing step, the inside of a chamber is in a decompressed state, and a first gas is supplied to a substrate inside the chamber. The first gas includes an organic solvent. The first pressurizing step is executed after the first decompressing step. In the first pressurizing step, mixed gas is supplied to the substrate inside the chamber, and the inside of the chamber is pressurized from the decompressed state to an atmospheric pressure state. The mixed gas includes an organic solvent and inert gas. The first atmospheric pressure step is executed after the first pressurizing step. In the first atmospheric pressure step, the inside of the chamber is maintained in the atmospheric pressure state, and at least any of liquid discharge treatment and substrate treatment is performed.

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Patent Owner(s)

Patent OwnerAddress
SCREEN HOLDINGS CO LTDKAMIKAWA NAKAGAWA TEMPLE IN TOKYO KYOTO PREFECTURE JAPAN (POSTCODE 602-8585) JINGDU CITY KYOTO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
EDAMITSU, Kenji Kyoto-shi, JP 13 14
FUJII, Daiki Kyoto-shi, JP 12 2
ITO, Kenichi Kyoto-shi, JP 146 1176
IWATA, Keiji Kyoto-shi, JP 35 192
KAWAI, Yuya Kyoto-shi, JP 16 4
YAMAMOTO, Shigeru Kyoto-shi, JP 196 2415

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