LOGIC CIRCUIT DESIGN METHOD

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United States of America Patent

APP PUB NO 20230030944A1
SERIAL NO

17786993

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Abstract

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Disclosed in the present application are a logic circuit design method and apparatus, and a storage medium. The method comprises: designing and generating an initial MOSFET-TFET hybrid logic circuit, the MOSFET-TFET hybrid logic circuit comprising several logic gates; in the series branch of the initial MOSFET-TFET hybrid logic circuit, replacing a first type of TFET with a MOSFET; the first type of TFET being directly grounded or connected to a power supply and not directly connected to the output ends of the logic gates. The logic circuit design method of the present application overcomes the defect of excessive current attenuation caused by the TFET in the series branch by replacing the first type of TFET in the series branch of the initial logic circuit with a MOSFET The first type of TFET is a TFET that is directly grounded or connected to a power supply and not directly connected to the output ends of the logic gates.

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Patent Owner(s)

Patent OwnerAddress
HANGZHOU WEIMING XINKE TECH CO LTDNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HUANG, Qianqian Hangzhou, Zhejiang, CN 24 62
HUANG, Ru Hangzhou, Zhejiang, CN 100 354
WANG, Yangyuan Hangzhou, Zhejiang, CN 23 104
WANG, Zhixuan Hangzhou, Zhejiang, CN 17 152
YE, Le Hangzhou, Zhejiang, CN 11 3

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