LIGHT EMITTING DIODE PRECURSOR AND ITS FABRICATION METHOD
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United States of America Patent
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Issued Date -
Jan 19, 2023
app pub date -
Dec 9, 2020
filing date -
Dec 9, 2020
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Abstract
A method of forming a Light Emitting Diode (LED) precursor is provided. The method comprises forming a LED stack comprising a plurality of Group III-nitride layers on a substrate, the LED stack comprising a LED stack surface formed on an opposite side of the LED stack to the substrate, and masking a first portion of the LED stack surface, leaving a second portion of the LED stack surface exposed. The second portion of the LED stack surface is subjected to a resistivity changing process such that a second region of the LED stack below the second portion of the LED stack surface comprising at least one of the Group III-nitride layers of the LED stack has a relatively higher resistivity than a resistivity of the respective Group-III nitride layer in a first region of the LED stack below the first portion of the LED stack surface.
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