LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
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United States of America Patent
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Issued Date -
Jan 12, 2023
app pub date -
Mar 1, 2021
filing date -
Mar 1, 2021
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Abstract
A laminate that can be used for diffusing an impurity diffusion component into a semiconductor substrate and manufactured by a method with good film formability, and which allows sufficient diffusion of the impurity diffusion component; a method for manufacturing the laminate; and a method for manufacturing a semiconductor substrate using the laminate. The laminate includes a diffusion-undergoing semiconductor substrate, an amine compound layer, and an impurity diffusion component layer, the amine compound layer is in contact with one main surface of the diffusion-undergoing semiconductor substrate, the impurity diffusion component layer is in contact with a main surface of the amine compound layer, the main surface is not in contact with the diffusion-undergoing semiconductor substrate, and the amine compound layer includes an amine compound including two or more nitrogen atoms and having an amino group constituted by at least one of the two or more nitrogen atoms; and/or an amine compound residue having one or more amino groups and bonding to the main surface via a covalent bond.
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