Semiconductor Structure
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United States of America Patent
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Jan 12, 2023
app pub date -
Jul 7, 2022
filing date -
Jul 7, 2022
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Abstract
A method for manufacturing a semiconductor structure is provided. The method includes a III-V semiconductor device in a first region of a base substrate and a further device in a second region of the base substrate. The method includes: (a) obtaining a base substrate comprising the first region and the second region, different from the first region; (b) providing a buffer layer over a surface of the base substrate at least in the first region, wherein the buffer layer comprises at least one monolayer of a first two-dimensional layered crystal material; (c) forming, over the buffer layer in the first region, and not in the second region, a III-V semiconductor material; and (d) forming, in the second region, at least part of the further device. A semiconductor structure is also provided.
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