METAL-OXIDE INFILTRATED ORGANIC-INORGANIC HYBRID RESISTIVE RANDOM-ACCESS MEMORY DEVICE
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United States of America Patent
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Issued Date -
Jan 5, 2023
app pub date -
Jun 30, 2022
filing date -
Jun 30, 2022
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Abstract
A resistive random access memory (RRAM) device includes a plurality of memory cells, each of at least a subset of the memory cells including first and second electrodes and an organic thin film compound mixed with silver perchlorate (AgClO4) salt as a base layer that is incorporated with a prescribed quantity of inorganic metal oxide molecules using vapor-phase infiltration (VPI), the base layer being formed on an upper surface of the first electrode and the second electrode being formed on an upper surface of the base layer. Resistive switching characteristics of the RRAM device are controlled as a function of a concentration of AgClO4 salt in the base layer. A variation of device switching parameters is controlled as a function of an amount of infiltrated metal oxide molecules in the base layer.
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