METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE
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United States of America Patent
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Issued Date -
Dec 29, 2022
app pub date -
Nov 20, 2020
filing date -
Nov 20, 2020
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Abstract
A method for manufacturing a memory resistor device. A first layer of a dielectric material is deposited onto a first electrode. A subsection of the first layer of the dielectric material is removed to expose one or more edges of the dielectric material and a second layer of the dielectric material is deposited to create one or more boundaries between the one or more edges of the first layer of the dielectric material and the second layer of the dielectric material. A second electrode is provided, wherein the one or more boundaries between the one or more edges of the first layer of the dielectric material and the second layer of the dielectric material extend at least partially from the first electrode to the second electrode.
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