Monolithically Integrated Top-Gate Thin-Film Transistor and Light-Emitting Diode and Method of Making
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United States of America Patent
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Issued Date -
Dec 29, 2022
app pub date -
Jun 27, 2022
filing date -
Jun 27, 2022
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Abstract
Pixels and sub-pixels suitable for high-density displays are disclosed. High-density is realized by forming a top-gate thin-film transistor (TFT) directly on top of a light-emitting diode (LED), thereby reducing the real estate required. To enable the stacked structure, a planarization layer is formed such that its top surface is coplanar with the top surface of the top electrode of the LED. The source and drain of the TFT are then formed on the planarization layer and electrode such that electrical contact is made between the LED and the TFT. In some embodiments, the fabrication includes deposition of an additional planarization layer whose top surface is coplanar with the top surface of the gate of the TFT. This enables formation of a parallel-plate capacitor on the TFT/LED stack, thereby reducing the footprint of the pixel even further.
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