SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Dec 29, 2022
app pub date -
Sep 6, 2022
filing date -
Sep 6, 2022
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor substrate, a contact region, a carrier suppression region and an electrode. The semiconductor substrate is shared by an insulated gate bipolar transistor (IGBT) region with an IGBT element and a freewheeling diode (FWD) region with an FWD element. The carrier suppression region is exposed from a surface of the semiconductor substrate in the IGBT region, and has a lower impurity concentration than the contact region. The carrier suppression region has a Schottky barrier junction with the electrode.
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