SEMICONDUCTOR DEVICE AND POWER AMPLIFIER
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United States of America Patent
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Issued Date -
Dec 22, 2022
app pub date -
May 30, 2022
filing date -
May 30, 2022
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Abstract
A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.
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