Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlN

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United States of America Patent

APP PUB NO 20220406591A1
SERIAL NO

17879825

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Described herein is a method for growing indium nitride (InN) materials by growing hexagonal InN using a pulsed growth method at a temperature lower than 300° C.

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Patent OwnerAddress
THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVYNAVAL RESEARCH LABORATORY 875 NORTH RANDOLPH STREET SUITE 1425 ARLINGTON VA 22203

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eddy,, JR Charles R Columbia, US 37 267
Mahadik, Nadeemullah A Springfield, US 7 7
Mehl, Michael J Davidsonville, US 5 3
Nepal, Neeraj Woodbridge, US 9 20
Qadri, Syed B Fairfax Station, US 42 255

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