CRITICAL DIMENSION ERROR ANALYSIS METHOD

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United States of America Patent

APP PUB NO 20220399237A1
SERIAL NO

17776637

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Abstract

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The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S02: removing extreme outliers from the critical dimension (CD) values; S03: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD″) values, according to relative error between CD″ and CD, dividing the rebuilt critical dimension (CD″) values into scenes and the number of the scenes is A; S04: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S05: modifying machine parameters and masks by the correction model according to above calculation results. The present invention uses an outer limit to remove extreme outliers, so as to analyze a critical dimension error during a lithography process quickly and accurately.

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SHANGHAI IC R&D CENTER CO LTDSHANGHAI

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Inventor Name Address # of filed Patents Total Citations
DUAN, Jiebin Shanghai, CN 5 3
FU, Hao Shanghai, CN 23 6
GUO, Lingyi Shanghai, CN 4 1
LI, Chen Shanghai, CN 352 2814
LI, Liren Shanghai, CN 5 36
SUN, Hongxia Shanghai, CN 13 27
WANG, Pengfei Shanghai, CN 172 398
WANG, Xiucui Shanghai, CN 1 0
XU, Bowen Shanghai, CN 4 12
YAN, Yan Shanghai, CN 189 1440
YU, Xueru Shanghai, CN 2 0
ZHOU, Tao Shanghai, CN 131 554

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