POWER AMPLIFIER MODULES INCLUDING SEMICONDUCTOR RESISTOR AND TANTALUM NITRIDE TERMINATED THROUGH WAFER VIA
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United States of America Patent
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Dec 8, 2022
app pub date -
Aug 17, 2022
filing date -
Aug 17, 2022
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Abstract
One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.
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