TERMINATION BALLAST TO SUPPRESS HOTSPOT FORMATION IN TRENCH FIELD PLATE POWER MOSFETS
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United States of America Patent
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Issued Date -
Dec 8, 2022
app pub date -
May 26, 2022
filing date -
May 26, 2022
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Abstract
A high voltage trench field plate power MOSFET device is fabricated in a substrate having first and second trenches separated from one another by a narrow epitaxial semiconductor drift pillar structure, where insulated gate electrode layers and insulated field plate layers are formed in the first and second trenches, and where a body well region is formed in an upper portion of the narrow epitaxial semiconductor drift pillar structure to include source contact regions in an active area, and to include an integrated ballast resistor section which connects one or more of the source contact regions to the termination area and which has no source contact regions.
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