LITHOGRAPHY MASK AND METHODS
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United States of America Patent
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Issued Date -
Dec 8, 2022
app pub date -
Apr 8, 2022
filing date -
Apr 8, 2022
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Abstract
A lithography mask including a substrate, a phase shift layer on the substrate and an etch stop layer is provided. The phase shift layer is patterned and the substrate is protected from etching by the etch stop layer. The etch stop layer can be a material that is semi-transmissive to light used in photolithography processes or it can be transmissive to light used in photolithography processes.
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