COMPOSITION FOR MEMORY CELL CONTAINING CHALCOGEN COMPOUND, STRUCTURE THEREOF, METHOD FOR MANUFACTURING SAME, AND METHOD FOR OPERATING SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 17, 2022
app pub date -
Nov 13, 2020
filing date -
Nov 15, 2019
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
An object of the present invention is to provide a composition, a memory structure suitable for the composition, a manufacturing method, and an operating method for stable operation in a memory element including a chalcogen compound. In order to achieve the object, in a memory array with a cross-point structure including a first electrode line and a second electrode line intersecting each other, and a selective memory element disposed at each intersection of the first electrode line and the second electrode line and being a chalcogen compound, the present invention may provide the memory array with a cross-point structure including the first electrode line formed on a substrate, a first functional electrode formed between the first electrode line and the selective memory element, and a second functional electrode formed between the second electrode line and the selective memory element, wherein the first functional electrode is formed as a line along the first electrode line.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully