METHOD AND APPARATUS FOR IMPROVED WAFER COATING

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United States of America Patent

APP PUB NO 20220367390A1
SERIAL NO

17574484

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Abstract

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A semiconductor device comprises a metallization layer, a passivation layer disposed above the metallization layer, a copper redistribution layer disposed on the passivation layer, a second passivation layer disposed on the copper redistribution layer, and a polyimide layer disposed over the second passivation layer. The polyimide layer and the second passivation layer include a continuous gap there-through that exposes a portion of the copper redistribution layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
WU, Cheng-Feng Hsinchu, TW 9 217
YU, Chih-Jen Hsinchu City, TW 5 6

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