Etching Composition for Silicon Nitride Layer and Etching Method Using the Same
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United States of America Patent
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Issued Date -
Nov 10, 2022
app pub date -
Jun 17, 2022
filing date -
May 4, 2021
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Abstract
Provided are an etching composition for a silicon nitride layer and an etching method using the same. An etching composition under pressure which selectively etches silicon nitride layers and suppresses etching of silicon oxide layers in a vertical stack structure the silicon nitride layers and the silicon oxide layers alternately deposited are exposed to the surface, and an etching method using the same, are provided.
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