BAFFLE PLATE FOR CONTROLLING WAFER UNIFORMITY AND METHODS FOR MAKING THE SAME

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United States of America Patent

APP PUB NO 20220359168A1
SERIAL NO

17874161

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Abstract

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Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MFG CO LTDNO 8 LI-HSIN RD 6 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun Yan Zhubei City, TW 13 7
CHEN, Jr-Sheng Hsinchu City, TW 15 6
CHIANG, Yu-Pei Hsinchu City, TW 13 7
HSU, Chih-Hsien Hsinchu City, TW 32 179
HUANG, Shih-Che Zhubei City, TW 23 361
HUANG, Zhi-Hao Hsin-Chu, TW 4 1
LI, An-Chi Hsin-Chu, TW 6 3
WANG, Alex Hsin-Chu, TW 28 672

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