PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

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United States of America Patent

APP PUB NO 20220359160A1
SERIAL NO

17278433

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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One plasma processing apparatus according to the invention includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power supply configured to supply a first radio frequency power for generating plasma via a matching unit; a sample stage on which the sample is placed; a second radio frequency power supply configured to supply a second radio frequency power to the sample stage; and a control device configured to control a matching unit so as to perform matching during a period corresponding to a mode in which a requirement for matching by the matching unit is defined when the first radio frequency power is modulated by a waveform having a plurality of amplitude values and repeating periodically. The period is each period of the waveform corresponding to any one of the plurality of amplitude values.

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Patent Owner(s)

Patent OwnerAddress
HITACHI HIGH-TECH CORPORATION17-1 TORANOMON 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hironaka, Yoshiyuki Tokyo, JP 2 2
Ichikawa, Takahiro Tokyo, JP 25 218
Ogoshi, Yasuo Tokyo, JP 1 0

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