LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESS INCLUDING PREHEATED SHOWERHEAD
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United States of America Patent
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Issued Date -
Oct 20, 2022
app pub date -
Sep 16, 2020
filing date -
Sep 23, 2019
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Abstract
A plasma enhanced chemical vapor deposition processing method is provided and includes: preheating a showerhead to a preheated state prior to and in preparation of a plasma enhanced chemical vapor deposition process of a substrate; determining at least one temperature of the showerhead while preheating the showerhead; determining based on the at least one temperature whether to continue preheating the showerhead; ceasing to preheat the showerhead in response to the at least one temperature satisfying a temperature criterion; and initiating the plasma enhanced chemical vapor deposition process while the showerhead is in the preheated state to package previously fabricated integrated circuits disposed on the substrate, wherein the plasma enhanced chemical vapor deposition process includes forming one or more film protective layers over the integrated circuits.
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