NANOSHEET FIELD EFFECT TRANSISTORS WITH PARTIAL INSIDE SPACERS
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United States of America Patent
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Issued Date -
Oct 6, 2022
app pub date -
Apr 22, 2022
filing date -
Jan 27, 2017
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Abstract
A method of forming a nanosheet device, including forming a channel stack on a substrate, where the channel stack includes at least one nanosheet channel layer and at least one sacrificial release layer, forming a stack cover layer on at least a portion of the channel stack, forming a dummy gate on at least a portion of the stack cover layer, wherein at least a portion of the at least one nanosheet channel layer and at least one sacrificial release layer is exposed on opposite sides of the dummy gate, removing at least a portion of the at least one sacrificial release layer on each side of the dummy gate to form a sacrificial supporting rib, and forming an inner spacer layer on exposed portions of the at least one nanosheet channel layer and at least one sacrificial supporting rib.
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