Method of making gate structure of a semiconductor device
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United States of America Patent
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Feb 6, 2024
Grant Date -
Oct 6, 2022
app pub date -
Jun 16, 2022
filing date -
Oct 20, 2011
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Abstract
A method of making a semiconductor device includes depositing a TiN layer over a substrate. The method further includes doping a first portion of the TiN layer using an oxygen-containing plasma treatment. The method further includes doping a second portion of the TiN layer using a nitrogen-containing plasma treatment, wherein the second portion of the TiN layer directly contacts the first portion of the TiN layer. The method further includes forming a first metal gate electrode over the first portion of the TiN layer. The method further includes forming a second metal gate electrode over the second portion of the TiN layer, wherein the first metal gate electrode has a different work function from the second metal gate electrode, and the second metal gate electrode directly contacts the first metal gate electrode.
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