EPITAXIAL SILICON WAFER FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER FOR MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Oct 6, 2022
app pub date -
Jun 24, 2022
filing date -
Oct 7, 2016
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Abstract
A manufacturing method of an epitaxial silicon wafer includes forming an epitaxial film made of silicon on a surface of a silicon wafer in a trichlorosilane gas atmosphere; and setting the nitrogen concentration of the surface of the epitaxial film through inward diffusion from a nitride film on the epitaxial film, the nitride film being formed by subjecting the silicon wafer provided with the epitaxial film to heat treatment in a nitrogen atmosphere.
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