MEMORY CELL AND MEMORY DEVICE
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United States of America Patent
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Issued Date -
Sep 29, 2022
app pub date -
Aug 11, 2020
filing date -
Aug 11, 2020
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Abstract
A memory device occupying a small area is provided. In a memory cell including a reading transistor, a writing transistor, and a capacitor, the writing transistor is provided above the reading transistor. Alternatively, the reading transistor is provided above the writing transistor. An oxide semiconductor is used for a semiconductor layer where a channel of the writing transistor is formed. An oxide semiconductor is used for a semiconductor layer where a channel of the reading transistor is formed. Memory cells are arranged in a matrix.
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