Semiconductor Structure and Method for Manufacturing Semiconductor Structure

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United States of America

SERIAL NO

17574913

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Abstract

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The embodiments of the present disclosure belong to the technical field of semiconductor manufacturing, and relate to a semiconductor structure and a method for manufacturing a semiconductor structure. Each of a plurality of storage structures in the semiconductor structure includes a plurality of capacitor structures stacked in a direction perpendicular to a substrate, each of the plurality of capacitor structures includes a bottom plate and an top plate which are arranged opposite to each other, and a first dielectric layer located between the bottom plate and the top plate, and the bottom plate and the top plate are both parallel to the substrate, all bottom plates in each of the plurality of storage structures are electrically connected, and all top plates in each of the plurality of storage structures are electrically connected; the bottom plate and the top plate extend in a plane parallel to the substrate.

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Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INC230000 ROOM 630 HAI HENG MANSION 6 CUI WEI ROAD HEFEI ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE ANHUI HEFEI CITY ANHUI PROVINCE 230000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LI, Sen Hefei, CN 63 79
LIU, Tao Hefei, CN 613 3850
WAN, Qiang Hefei, CN 51 44
XIA, JUN Hefei, CN 90 369
ZHAN, Kangshu Hefei, CN 29 2

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