THIN-FILM STRUCTURE, SEMICONDUCTOR ELEMENT INCLUDING THE THIN-FILM STRUCTURE, AND METHOD OF MANUFACTURING THE THIN-FILM STRUCTURE
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United States of America Patent
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Issued Date -
Sep 22, 2022
app pub date -
Oct 6, 2021
filing date -
Mar 18, 2021
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Provided is a thin-film structure including a substrate, a nanocrystalline graphene layer provided on the substrate, and a two-dimensional material layer provided on the nanocrystalline graphene layer. The nucleation density of the two-dimensional material layer is 109 ea/cm2 or more according to the nanocrystalline graphene layer, and accordingly, a two-dimensional material layer having an improved uniformity may be formed and a time duration for forming the two-dimensional material layer may be greatly decreased.
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