Semiconductor memory device and method of manufacturing the same
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United States of America Patent
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Feb 27, 2024
Grant Date -
Sep 22, 2022
app pub date -
Sep 10, 2021
filing date -
Mar 22, 2021
priority date (Note) -
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Abstract
A semiconductor memory device includes a first conductive layer, a semiconductor layer extending in a first direction and being opposed to the first conductive layer, and a gate insulating film disposed between the first conductive layer and the semiconductor layer. The first conductive layer includes a first region, a second region disposed between the first region and the gate insulating film, and a third region disposed between the first region and the first interlayer insulating layer. The first to the third regions contain a metal. The third region contains silicon (Si). The first region does not contain silicon (Si) or has a lower silicon (Si) content than a silicon (Si) content in the third region. The second region does not contain silicon (Si) or has a lower silicon (Si) content than the silicon (Si) content in the third region.
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