WAFER TEMPERATURE GRADIENT CONTROL TO SUPPRESS SLIP FORMATION IN HIGH-TEMPERATURE EPITAXIAL FILM GROWTH
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United States of America Patent
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Issued Date -
Sep 22, 2022
app pub date -
Mar 17, 2022
filing date -
Mar 18, 2021
priority date (Note) -
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status (Latency Note)
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Abstract
A method of operating a reactor system to provide wafer temperature gradient control is provided. The method includes operating a center temperature sensor, a middle temperature sensor, and an edge temperature sensor to sense a temperature of a center zone of a wafer on a susceptor in reaction chamber of the reactor system, to sense a temperature of a middle zone of the wafer, and to sense a temperature of an edge zone of the wafer. The temperatures of the center, middle, and edge zones of the wafer are processed with a controller to generate control signals based on a predefined temperature gradient for the wafer. First, second, and third sets of heater lamps are operated based on the temperature of the center, middle, and edge zones to heat the center, the middle, and the edge zone of the wafer. Reactor systems are also described.
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International Classification(s)
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- G01J:MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTE....
- H05B:ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE ....
- F27B:FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPE....
- C30B:SINGLE-CRYSTAL GROWTH
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