Semiconductor Device Having Contact Trenches Extending from Opposite Sides of a Semiconductor Body

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United States of America Patent

APP PUB NO 20220285550A1
SERIAL NO

17824198

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Abstract

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A method of manufacturing a semiconductor body includes forming a pattern at a first side of a substrate, forming a semiconductor layer on the first side of the substrate, attaching the substrate and the semiconductor layer to a carrier via a surface of the semiconductor layer, and removing the substrate from a second side opposite to the first side.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGAM CAMPEON 1-15 NEUBIBERG 85579

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Irsigler, Peter Obernberg/Inn, AT 65 273
Lang, Hans-Peter Munich, DE 14 152
Meiser, Andreas Sauerlach, DE 155 859
Meyer, Thorsten Regensburg, DE 309 5595
Zundel, Markus Egmating, DE 184 1595

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