METHOD OF MAKING HETEROEPITAXIAL STRUCTURES AND DEVICE FORMED BY THE METHOD
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Sep 8, 2022
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May 24, 2022
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Jul 17, 2012
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A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.
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