Silicon Core Wire for Depositing Polycrystalline Silicon and Production Method Therefor
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United States of America Patent
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Sep 8, 2022
app pub date -
Jul 29, 2020
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Aug 2, 2019
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Abstract
A silicon core wire for depositing polycrystalline silicon is formed in a gate shape and includes a pair of vertical rod portions and a horizontal portion laterally connecting upper ends of the vertical rod portions, in which ends of the vertical rod portions and the horizontal portion are joined by welding, and a corner junction has a surface metallic concentration of 1 ppbw or less, more specifically, with an iron concentration of 0.2 ppbw or less, a chromium concentration of 0.1 ppbw or less, a nickel concentration of 0.05 ppbw or less, and a titanium concentration of 0.2 ppbw or less.
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