ELECTRICAL MEMRISTIVE DEVICES BASED ON BILAYER ARRANGEMENTS OF HFOy AND WOx
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Sep 1, 2022
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Mar 1, 2021
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Mar 1, 2021
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Abstract
An electrical memristive device has a layer structure. The later structure comprises two electrodes and a bilayer material arrangement that connects the two electrodes. The bilayer material arrangement may, for example, be sandwiched by the two electrodes, in direct contact therewith. The bilayer material arrangement includes an HfOy layer, where 1.3±0.1≤y<1.9±0.1, as well as a WOx layer in direct contact with the HfOy layer, where 2.5±0.1≤x<2.9±0.1. The bilayer arrangement involves sub-stoichiometric layers of HfOy and WOx, where the WOx layer may advantageously have a polycrystalline structure in the monoclinic phase, while the HfOy layer is preferably amorphous.
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