Semiconductor device with epitaxial liftoff layers for directly converting radioisotope emissions into electrical power
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 10, 2023
Grant Date -
Aug 18, 2022
app pub date -
Dec 13, 2021
filing date -
Feb 17, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A radioisotope source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material. The devices can be connected in series or parallel.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully