LOW TEMPERATURE ROUTE FOR EPITAXIAL INTEGRATION OF PEROVSKITES ON SILICON
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United States of America Patent
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Aug 4, 2022
app pub date -
Apr 29, 2020
filing date -
Apr 29, 2019
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Abstract
The present disclosure provides a layering structure that permits integration of epitaxially oriented perovskite oxides, such as bismuth ferrite (BiFeO3), epitaxially oriented barium titanate (BaTiO3), epitaxially oriented (SrTiO3), or their superstructures (BTO/STO) or solid solutions, onto a Si substrate through a perovskite buffer layer. The structure can retain thermal process-sensitive dopant positions and other thermal process window-sensitive features through atomic layer deposition of an oxide perovskite. Also provided are methods of preparing these layered structures.
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