PHASE SHIFT MASK BLANK, MANUFACTURING METHOD THEREOF, AND PHASE SHIFT MASK

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United States of America Patent

APP PUB NO 20220236638A1
SERIAL NO

17723080

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a phase shift mask blank including a substrate, and a phase shift film thereon, the phase shift film composed of a material containing silicon and nitrogen and free of a transition metal, exposure light being KrF excimer laser, the phase shift film consisting of a single layer or a plurality of layers, the single layer or each of the plurality of layers having a refractive index n of at least 2.5 and an extinction coefficient k of 0.4 to 1, with respect to the exposure light, and the phase shift film having a phase shift of 170 to 190° and a transmittance of 4 to 8%, with respect to the exposure light, and a thickness of up to 85 nm.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTD4-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-0005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KOSAKA, Takuro Joetsu-shi, JP 52 118

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