GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGY
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United States of America Patent
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Jul 21, 2022
app pub date -
Apr 7, 2022
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Mar 6, 2015
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Abstract
A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
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