DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED SEMICONDUCTOR DEVICES
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United States of America
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Jun 30, 2022
app pub date -
Mar 17, 2022
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Mar 17, 2022
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Abstract
A DRAM capacitor comprising a first capacitor electrode configured as a container and comprising a doped titanium nitride material, a capacitor dielectric on the first capacitor electrode, and a second capacitor electrode on the capacitor dielectric. Methods of forming the DRAM capacitor are also disclosed, as are semiconductor devices and systems comprising such DRAM capacitors.
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