SELECTIVE REMOVAL OF METAL OXIDE HARD MASKS
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United States of America
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Jun 30, 2022
app pub date -
Dec 22, 2021
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Dec 22, 2021
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Abstract
Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.
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