PATTERN FORMATION METHOD AND TEMPLATE MANUFACTURING METHOD
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United States of America
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Issued Date -
Jun 30, 2022
app pub date -
Aug 31, 2021
filing date -
Aug 31, 2021
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status (Latency Note)
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Abstract
According to one embodiment, a pattern formation method includes patterning a first film on a substate to have a plurality of lines extending in a first direction and a second pattern portion extending in a second direction intersecting the first direction. Each line having at least a first width and being spaced from an adjacent line in the second direction by a least three times the first width and spaced from ends of the lines in the first direction by twice or less the first width. A conformal film is then formed on the patterned first film. The conformal film having a thickness equal to the first width. The patterned first film is then removed while leaving portions of the conformal film that were previously on sidewalls of the plurality of lines behind.
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