QUANTUM DOT POROUS SILICON MEMBRANE-BASED RADIATION DETECTOR

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United States of America Patent

APP PUB NO 20220181380A1
SERIAL NO

17439440

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A detection layer (416) for a radiation detector (400) includes a porous silicon membrane (418). The porous silicon membrane includes silicon (419) with a first side (430) and a second opposing side (432), a plurality of pores (420) extending entirely through the silicon from the first side to the second opposing side, each including shared walls (426), at least one protrusion of silicon (424) protruding out and extending from the first side a distance (504, 604, 704). The porous silicon membrane further includes a plurality of radiation sensitive quantum dots (422) in the pores and a quantum dot layer disposed on the first side and having a surface (434) and a thickness (506, 606, 706), wherein the thickness is greater than the distance.

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Patent Owner(s)

Patent OwnerAddress
WAYNE STATE UNIVERSITY4043 FACULTY/ADMINISTRATION BUILDING DETROIT MI 48202
KONINKLIJKE PHILIPS N VEINDHOVEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BROCK, STEPHANIE LEE FERNDALE, US 3 0
CHAPPO, MARC ANTHONY ELYRIA, US 19 56

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