SPUTTERING TARGET AND METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
May 26, 2022
app pub date -
Mar 13, 2020
filing date -
Mar 13, 2020
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Abstract
Provided are a sputtering target that makes it possible to form a chalcogenide material film with enhanced heat resistance, a method of manufacturing the sputtering target, and a memory device manufacturing method. The sputtering target includes an alloy containing a first component containing arsenic and selenium and a second component containing at least one of boron and carbon.
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