Importance

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Abstract

A gallium nitride (GaN) semiconductor device has first and second electrodes connected to a top metal layer disposed in complementary first and second irregular shapes, each irregular shape including a wide connection area at a first end, a tapered area, and a narrow area at a second end. The first and second irregular shapes are arranged adjacent each other along complementary edges such that a gap between the complementary edges is of substantially constant width. The first and second wide connection areas include pads for wire bond or land grid array electrical connections to external circuitry. The first and second irregular shapes for source and drain metal of a field effect transistor (FET) or high electron mobility transistor (HEMT) allows the width of the gate finger to be short so that electrical current injected from the gate can reach all portions of the gate fingers efficiently during high frequency switching, making the topology suitable for high voltage power devices.

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First Claim