ETCHING METHOD AND ETCHING APPARATUS
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United States of America
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Mar 31, 2022
app pub date -
Dec 10, 2021
filing date -
Dec 10, 2021
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Abstract
An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.
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