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Abstract

A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of:

deposition of at least one single-crystal layer by three-dimensional epitaxial growth on a starting substrate, the layer including areas resulting from the growth of basal facets, and areas resulting from the growth of facets of different orientations, called non-basal facets;supply of an n-dopant gas including a first chemical element selected from the chemical elements of group 16 of the periodic table, and at least one second chemical element selected from the chemical elements of group 14 of the periodic table, such that the concentration of the second element in the areas resulting from the growth of the basal facets is higher than 1.0×1017/cm3, and the concentration of the first element in the areas resulting from the growth of the non-basal facets is lower than 2.0×1018/cm3.

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