MASK BLANK, TRANSFER MASK, AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD
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United States of America
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Issued Date -
Feb 3, 2022
app pub date -
Sep 10, 2019
filing date -
Sep 10, 2019
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Abstract
Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.
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