HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K METAL GATE (HKMG)
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United States of America
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Issued Date -
Jan 20, 2022
app pub date -
Jul 16, 2020
filing date -
Jul 16, 2020
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Abstract
The present disclosure relates to semiconductor devices, and more particularly, to high voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) and methods of manufacture. A structure of the present disclosure includes a plurality of extended drain MOSFET (EDMOS) devices on a high voltage well with a split-gate dielectric material including a first gate dielectric material and a second gate dielectric material, the second gate dielectric material including a thinner thickness than the first gate dielectric material, and a high-k dielectric material on the split-gate dielectric material.
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